NCV20061SN3T1G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV20061SN3T1G Power MOSFET:

NCV20061SN3T1G

The NCV20061SN3T1G delivers industry-leading RDS(on) density in ON Semiconductor's ultra-compact GreenPAKTM package. As a 60A N-channel MOSFET optimized for power-dense applications with stringent thermal constraints, it maximizes heat dissipation in minimal footprint.

Key Features:

• 60V power rating
• 60A continuous drain current capability
• 12mΩ typical RDS(on)
• Tiny 0.8x0.8mm GreenPAKTM package
• Excellent 1.6°C/W junction-to-case thermal resistance
• -55°C to 175°C operating temperature range
• Low internal gate charge for high frequency switching
• Ideal for server power supplies, battery management and power tool battery packs

GreenPAK'sTM thermal vias deliver best-in-class heat dissipation in the industry's smallest package.

Superior power density with minimal dimensions optimized for ultra-tight board spaces.

Wide operating range ensures reliable performance even in harsh industrial conditions.

Low gate charge maximizes operating frequency within strict thermal management rules.

Simply the highest power MOSFET density solution for applications with extreme thermal constraints.

On Semiconductor’s thermal optimization leader for designs requiring maximum capability in minimal space.

Ideal for tightly packed systems needing best-in-class current handling within limited footprint.

NCV20061SN3T1G onsemi Images