NCP51100ASNT1G onsemi

Here is the English description of the NCP51100ASNT1G chip:

• Breakdown Voltage: 30V
• On-Resistance: N/A (typ)
• Continuous Drain Current: 1A
• Fast Switching Speeds
• SOT-23 (DBV) Package

The NCP51100ASNT1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 1A
• Low RDS(on) enables high conduction with minimal losses
• Fast switching improves efficiency at high frequencies
• Ultra-small SOT-23 package saves precious board space

Common Applications:

• Point-of-load DC/DC converters below 1A loads
• Battery chargers under 1A current
• Space constrained power supplies

Benefits include the ability to precisely switch up to 1A in a minimized footprint.

Well-suited for compact designs where board space is limited.

In summary, the NCP51100ASNT1G combines 1A switching capability with an extremely small package size. The focus is on minimized solutions.

NCP51100ASNT1G onsemi Images