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NCP1616A1DR2G onsemi

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NCP1616A1DR2G onsemi

Description : NCP1616A1DR2G onsemi SOIC-9

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Here is the English description of the NCP1616A1DR2G chip:

  • Breakdown Voltage: 30V
  • On-Resistance: N/A (typ)
  • Continuous Drain Current: 1.6A
  • Fast Switching Speeds
  • TO-220 FullPak 2L Package

The NCP1616A1DR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 1.6A
  • Low RDS(on) minimizes conduction losses
  • Fast switching improves efficiency at high frequencies
  • TO-220 FullPak 2L package provides strong thermal dissipation

Common Applications:

  • Point-of-load DC/DC converters below 1.6A loads
  • Motor drivers and controls under 1.6A load
  • General purpose switching under 1.6A load

Benefits include the ability to precisely switch up to 1.6A with low resistance and losses. The thermally robust package supports continuous operation.

Well-suited for applications requiring switching of currents up to 1.6A where heat dissipation is important.

In summary, the NCP1616A1DR2G offers 1.6A switching capability with low losses and emphasizes reliable thermal performance.


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